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P-type monocrystalline silicon wafers

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0.4-1.1 <Ω·cm>

Resistivity

≤16 <ppma>

Oxygen content

≤1 <ppma>

Carbon content

≥70 <µs>

Lifetime

Material properties

Item Specifications Test Method
Growth method CZ --
Crystallinity Monocrystalline --
Conductive type P-type PN testing machine
Dimensions M10：182.2*182.2*φ247mm
G12：210*210*φ295mm		 AOI
Thickness M10：90-160μm
G12：90-160μm		 AOI

Electrical properties

Item Specifications Test Method
Resistivity 0.4-1.1 <Ω·cm> AOI
Lifetime ≥ 70 <μs> BCT-400
Oxygen content ≤16 FTIR (ASTM F121-83)
Carbon content ≤1 FTIR (ASTM F123-91)

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Gokin provides you with professional consulting services, N-type silicon wafer product information, photovoltaic industry business models, and full lifecycle operation and maintenance capabilities. Please feel free to call us.

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Tel

0756-6836188

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Email

gk@gokinsolar.com