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N-type monocrystalline silicon wafers

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0.4-1.6 <Ω·cm>

Resistivity

≤12 <ppma>

Oxygen content

≤1 <ppma>

Carbon content

≥800 <µs>

Lifetime

Material properties

Item Specifications Test Method
Growth method Czochralski technique --
Crystallinity Monocrystalline --
Conductive type N-Type PN testing machine
Dimensions M10:182.2*182.2*φ247mm
G12:210*210*φ295mm
G12-R:182*210*φ272mm
AOI
Thickness M10:90-160μm
G12:90-160μm
G12-R:90-160μm
AOI

Electrical properties

Item Specifications Test Method
Resistivity 0.4-1.6<Ω·cm> AOI
Lifetime ≥800<μs> BCT-400
Oxygen content ≤12 FTIR (ASTM F121-83)
Carbon content ≤1 FTIR (ASTM F123-91)

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Gokin provides you with professional consulting services, N-type silicon wafer product information, photovoltaic industry business models, and full lifecycle operation and maintenance capabilities. Please feel free to call us.

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Tel

0756-6836188

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Email

gk@gokinsolar.com